SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 125-127

  Zhang, Zheng ^a   Qiu, Zhijun ^b   Hellström, Per Erik ^a   Malm, Gunnar ^a   Olsson, Jörgen ^c   Lu, Jun ^c   Östling, Mikael ^a   Zhang, Shi Li ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b FUDAN UNIVERSITY   (China)

^c UPPSALA UNIVERSITY   (Sweden)

Author keywords

Dopant segregation (DS); MOSFETs; Platinum silicide; Schottky barrier lowering; Schottky barrier source drain (SB S D); Ultrathin body Si on insulator (UTB SOI)

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); LOW TEMPERATURE PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

DOPANT SEGREGATION; PLATINUM SILICIDE; SCHOTTKY-BARRIER LOWERING; SCHOTTKY-BARRIER SOURCE/DRAIN (SB-S/D);

MOSFET DEVICES;

EID: 37549025369     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911990     Document Type: Article

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