Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures

Thin Solid Films

Volumn 434, Issue 1-2, 2003, Pages 152-156

  Mansour, Farida ^a   Mahamdi, Ramdane ^a   Jalabert, Laurent ^b   Temple Boyer, Pierre ^b  

^a Universite Mentouri Constantine   (Algeria)

^b LAAS CNRS   (France)

Author keywords

Boron; Diffusion; Nitrogen doped silicon; Polysilicon gate

Indexed keywords

BORON; NITROGEN; POLYSILICON; SEMICONDUCTOR DOPING; SILICON;

SILICON FILMS;

THIN FILMS;

EID: 0037601702     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00468-1     Document Type: Article

References (15)

1. Buonaquisti A.D., Carter W., Holloway P.H. Thin Solid Films. 100:1983;235.
2. Garben B., Orr-Arienzo W.A., Lever R.F. J. Electrochem. Soc. 133:1986;2152.
3. Schaber H., Criegern R.V., Weitzel I. J. Appl. Phys. 58:1985;4036.
4. Batra S., Manning M., Dennison C., Sultan A., Bhattacharya S., Park S., Banerjee S., Lobo M., Lux G., Kirschbaum C., Norberg J., Smith T., Mulvaney B. J. Appl. Phys. 73:1993;3800.
5. Goto K.I., Matsuo J., Tada Y., Sugii T., Yamada I. IEEE Trans. Electron. Devices. 46:1999;683.
6. Ren X., Ozturk M.C., Wortman J.J., Blat C., Nicollian E. J. Electron. Mater. 20:1991;251.
7. Mahamdi R., Mansour F., Scheid E., Temple-Boyer P., Jalabert L. Jpn. J. Appl. Phys. 40:(1):2001;6723.
8. Temple-Boyer P., Jalabert L., Couderc E., Scheid E., Fadel P., Rousset B. Thin Solid Films. 414:2002;13.
9. Ho C.P., Plummer J.D., Hansen S.E., Dutton R.W. IEEE Trans. Electron. Devices. 11:1983;1438.
10. Pavlov P.V., Zorin E.I., Tetelbaum D.I., Khokhlov A.F. Phys. Status Solidi A. 35:1976;11.
11. Cantin J.L., von Bardelen H.J., Gosset L.G., Ganem J.J., Trimaille I. J. Non-Cryst. Solids. 280:2001;143.
12. Suzuki K., Miyata N., Kawamura K. Jpn. J. Appl. Phys. 34:1995;1748.
13. Nakayama S., Sakai T. J. Appl. Phys. 79:(8):1996;4024.
14. Nakayama S., Sakai T. J. Electrochem. Soc. 144:1997;4326.
15. Pfiester J.R., Baker F.K., Mele T.C., Tseng H.H., Tobin P.J., Hayden J.D., Miller J.W., Gunderson C.D., Parrillo L.S.C. IEEE Trans. Electron. Devices. 37:1990;1842.