A high Schottky-Barrier of 1.1 eV between Al and S-passivated p-type Si(100) surface

IEEE Electron Device Letters

Volumn 28, Issue 1, 2007, Pages 71-73

  Song, G ^a   Ali, M Y ^a   Tao, M ^a  

^a UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

Schottky barriers; Semiconductor metal interfaces; Silicon; Sulfur; Surface treatment

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; ELECTROSTATICS; PASSIVATION; SEMICONDUCTOR DIODES; STATISTICS; SURFACE TREATMENT; VOLTAGE MEASUREMENT;

ACTIVATION-ENERGY MEASUREMENTS; CAPACITANCE-VOLTAGE MEASUREMENTS; SEMICONDUCTOR-METAL INTERFACES;

SCHOTTKY BARRIER DIODES;

EID: 33845989126     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.887942     Document Type: Article

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