Interfacial segregation of metal at NiSi/Si junction for novel dual silicide technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 135-138

  Nishi, Yoshifumi ^a   Tsuchiya, Yoshinori ^a   Kinoshita, Atsuhiro ^a   Yamauchi, Takashi ^a   Koga, Junji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; METALS; NICKEL COMPOUNDS;

INTERFACIAL SEGREGATION; SCHOTTKY-BARRIER HEIGHT; SILICIDE TECHNOLOGY;

SCHOTTKY BARRIER DIODES;

EID: 47249138570     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418883     Document Type: Conference Paper

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