Characteristics of Modified-Schottky-Barrier (MSB) FinFETs

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

Volumn , Issue , 2005, Pages 118-119

  Lin, Chia Pin ^a,b   Tsui, Bing Yue ^a,b,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW THERMAL BUDGET; METAL SILICIDE; PROCESS TECHNIQUES;

FABRICATION; MOSFET DEVICES; VLSI CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 27144454024     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.2514/1.4652     Document Type: Conference Paper

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4. J. Kedzierski, et al., IEDM Tech. Digest., p.57, 2000.
5. H. C. Lin, et al., Proc. IEEE Conf. Nanotechnology, p.430, 2004.
6. B. Y. Tsui, et al., IEEE Elec. Dev. Lett., vol.25, p.430, 2004.