Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 453-456

  Ohguro, T ^a   Nakamura, S ^a   Morifuji, E ^a   Ono, M ^a   Yoshitomi, T ^a   Saito, M ^a   Momose, H S ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC CONDUCTIVITY; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; NITROGEN; OXIDATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SPUTTERING; SURFACE ROUGHNESS;

DEEP SUBMICRON DEVICES; NICKEL MONOSILICIDE; SELF ALIGNED SILICIDATION;

NICKEL COMPOUNDS;

EID: 0029490218     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)