Hot-carrier effects in P-channel modified Schottky-barrier FinFETs

IEEE Electron Device Letters

Volumn 26, Issue 6, 2005, Pages 394-396

  Lin, Chia Pin ^a   Tsui, Bing Yue ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

FinFET; Hot carrier; Schottky barrier (SB); Silicon on insulator (SOI)

Indexed keywords

ANNEALING; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRODES; HOT CARRIERS; SCHOTTKY BARRIER DIODES; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

FINFET; HOT CARRIER EFFECTS; SCHOTTKY BARRIER (SB);

FIELD EFFECT TRANSISTORS;

EID: 20544449943     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.848096     Document Type: Article

References (7)

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