A comparative study of dopant-segregated Schottky and raised source/ drain double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2665-2677

  Vega, Reinaldo A ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ambipolar; Dopant segregation; ErSi1.7; Metallic source drain (MSD); NiSi; Raised source drain (RSD); Schottky barrier (SB)

Indexed keywords

DESIGN; DOPING (ADDITIVES); PROCESS ENGINEERING; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR SWITCHES; SPECIFICATIONS;

AMBIPOLAR; DOPANT SEGREGATION; ERSI1.7; METALLIC SOURCE/DRAIN (MSD); NISI; RAISED SOURCE/DRAIN (RSD); SCHOTTKY BARRIER (SB);

MOSFET DEVICES;

EID: 53649097679     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003024     Document Type: Article

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