Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 57-59

  Kedzierski, J ^a   Xuan, P ^a   Anderson, E H ^a   Bokor, J ^a   King, T J ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

OXIDE SCALING;

MOSFET DEVICES;

EID: 0034453418     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)