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Volumn 47, Issue 4 PART 2, 2008, Pages 2398-2401

Phase and composition control of Ni fully silicided gates by nitrogen ion implantation and double Ni silicidation

(7) Yamamoto, Kazuhiko a Sakashita, Shinsuke b Sato, Yoshihiro a Inoue, Masao b Anma, Masatoshi b Oosuka, Tsutomu a Yugami, Jiro b

a PANASONIC CORPORATION (Japan)

b RENESAS TECHNOLOGY CORP (Japan)

Author keywords

Ni fully silicided gate; Nitrogen implantation; Phase control

Indexed keywords

ANNEALING; DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; ION BOMBARDMENT; ION IMPLANTATION; MOSFET DEVICES; NICKEL ALLOYS; NICKEL COMPOUNDS; NITROGEN; NONMETALS; POLYSILICON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON;

CAPACITANCE-VOLTAGE; CMOS DEVICES; COMPLEMENTARY; COMPOSITION CONTROLS; DEVICE INTEGRATIONS; FLAT BANDS; FULLY SILICIDED GATES; GATE ELECTRODES; GRAIN SIZES; IMPLANTED NITROGENS; MOS GATES; NI-FULLY SILICIDED GATE; NI-SILICIDE; NITROGEN ATOMS; NITROGEN IMPLANTATION; NITROGEN ION IMPLANTATIONS; OPTIMIZED PROCESSES; POLYCRYSTALLINE SILICONS; PROCESS TEMPERATURES; PROCESS WINDOWS; SI LAYERS; SILICIDATION; VOLTAGE SHIFTS;

NICKEL;

EID: 54249130781 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.2398 Document Type: Article

Times cited : (2)

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