Effective Schottky Barrier height reduction using sulfur or selenium at the NiSi/n-Si (100) interface for low resistance contacts

IEEE Electron Device Letters

Volumn 28, Issue 12, 2007, Pages 1102-1104

  Wong, Hoong Shing ^a   Chan, Lap ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Contact resistance; Effective Schottky barrier; Schottky barriers; Selenium; Sulfur

Indexed keywords

ADSORBATES; CONTACT RESISTANCE; ION IMPLANTATION; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SELENIUM; SULFUR;

SILICIDATION; VALENCE-MENDING ADSORBATES;

FIELD EFFECT TRANSISTORS;

EID: 36549079544     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910003     Document Type: Article

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