Comparison study of tunneling models for schottky field effect transistors and the effect of schottky barrier lowering

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1593-1600

  Vega, Reinaldo A ^a,b  

^a Kate Gleason College of Engineering   (United States)

^b Biophan Technologies Inc   (United States)

Author keywords

Airy function; Ambipolar; Metallic source drain (S D); Nanotechnology; Schottky barrier; Semiconductor device modeling; Tunneling model; Wentzel Kramers Brillouin (WKB) method

Indexed keywords

ELECTRON TUNNELING; MATRIX ALGEBRA; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MODELS;

AIRY FUNCTION; AMBIPOLAR; METALLIC DRAIN; METALLIC SOURCE; TUNNELING MODEL; WENTZEL-KRAMERS-BRILLOUIN (WKB) METHOD;

MESFET DEVICES;

EID: 33745714971     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.876261     Document Type: Article

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