Novel aluminum segregation at NiSi/p+-Si source/drain contact for drive current enhancement in PFinFETs

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 85-87

  Sinha, Mantavya ^a   Lee, Rinus Tek Po ^b   Tan, Kian Ming ^b   Lo, Guo Qiang ^a   Chor, Eng Fong ^b   Yeo, Yee Chia ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Aluminum (Al) implant; Contact resistance; FinFETs; Nickel silicide (NiSi); Schottky barriers

Indexed keywords

ALUMINA; CONTACT RESISTANCE; LIGHT METALS; NICKEL; NICKEL ALLOYS; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON;

CONTACT TECHNOLOGIES; DRIVE CURRENT ENHANCEMENTS; DRIVE CURRENTS; FINFETS; ION IMPLANTS; PARASITIC SERIES RESISTANCES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

ALUMINUM;

EID: 58149512039     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2008826     Document Type: Article

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