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Applied Physics Letters

Volumn 93, Issue 7, 2008, Pages

Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation

(4) Wong, Hoong Shing a Chan, Lap a Samudra, Ganesh a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; METALS; MODULATION; NONMETALS; SCHOTTKY BARRIER DIODES; SEGREGATION (METALLOGRAPHY); SELENIUM; SELENIUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICIDES; SILICON; SILICON COMPOUNDS;

CONDUCTION BANDS; DEPINNING; FERMI-LEVEL PINNING; METAL SILICIDES; SCHOTTKY-BARRIER HEIGHT; SI(100); SILICIDATION; SILICIDATION PROCESS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50249156788 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2970958 Document Type: Article

Times cited : (29)

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