Work function of Ni silicide phases on HfSiON and SiO2: NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 34-36

  Kittl, J A ^a   Pawlak, M A ^b   Lauwers, A ^b   Demeurisse, C ^b   Opsomer, K ^b   Anil, K G ^b   Vrancken, C ^b   van Dal, M J H ^c   Veloso, A ^b   Kubicek, S ^b   Absil, P ^b   Maex, K ^b   Biesemans, S ^b  

^a TEXAS INSTRUMENTS   (Belgium)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Full silicidation; High dielectric; Metal gate; Ni2Si; Ni31Si12; Ni3Si; NiSi; Work function

Indexed keywords

GATES (TRANSISTOR); LOW TEMPERATURE PROPERTIES; MOS DEVICES; MOSFET DEVICES; NITROGEN COMPOUNDS; THRESHOLD VOLTAGE;

FULL SILICIDATION; SILICIDE PHASE; WORK FUNCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33645465482     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.861404     Document Type: Article

References (7)

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