Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 147-150

  Larrieu, G ^a   Dubois, E ^a   Valentin, R ^a   Breil, N ^a,b   Damneville, F ^a   Dambrine, G ^a   Raskin, J P ^c   Pesant, J C ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; NONMETALS; PLATINUM;

BAND EDGES; BORON SEGREGATION; CURRENT DRIVE; CUT-OFF FREQUENCIES; DOPANT-FREE; LOW TEMPERATURE; LOW-TEMPERATURE ACTIVATION; P-MOSFETS; PLATINUM SILICIDE; RF CHARACTERIZATION; THIN BODIES;

ELECTRON DEVICES;

EID: 42449160921     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418886     Document Type: Conference Paper

References (7)

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3. T. Kinoshita et al., "Ultra Low Voltage Operations in Bulk CMOS Logic Circuits with Dopant Segregated Schottky Source/Drain Transistors", IEDM Tech. Dig., December 2006.
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