Can carbon-implanted silicon be applied as wide-bandgap emitter?

Journal of Materials Research

Volumn 11, Issue 7, 1996, Pages 1653-1658

  Oostra, D J ^a   Politiek, J ^a   Bulle Lieuwma, C W T ^a   Vandenhoudt, D E W ^a   Zalm, P C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ARSENIC; CRYSTAL DEFECTS; DOPING (ADDITIVES); HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); ION IMPLANTATION; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CARBON FLUORYL GROUP; WIDE BANDGAP EMITTER;

SILICON CARBIDE;

EID: 0030191199     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0207     Document Type: Article

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