Schottky barrier height modulation using dopant segregation in Schottky-barrier SOI-MOSFETs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 457-460

  Zhang, M ^a   Knoch, J ^a   Zhao, Q T ^a   Lenk, St ^a   Breuer, U ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); ION IMPLANTATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

DOPANT SEGREGATION; DOPANTS; HOLE INJECTION; SILICIDATION;

MOSFET DEVICES;

EID: 33745680826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546683     Document Type: Conference Paper

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