Sub-0.1-eV effective Schottky-barrier height for NiSi on n-type Si (100) using antimony segregation

IEEE Electron Device Letters

Volumn 28, Issue 8, 2007, Pages 703-705

  Wong, Hoong Shing ^a   Chan, Lap ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Antimony; NiSi; Schottky barrier (SB); Segregation

Indexed keywords

BIAS VOLTAGE; CMOS INTEGRATED CIRCUITS; CONTACT RESISTANCE; ELECTRON TUBE RECTIFIERS; NICKEL COMPOUNDS; SEMICONDUCTING ANTIMONY; SILICON ON INSULATOR TECHNOLOGY;

ANTIMONY SEGREGATION; NICKEL SILICIDE; RECTIFICATION RATIO;

SCHOTTKY BARRIER DIODES;

EID: 34547828977     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.901668     Document Type: Article

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