Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFET's/SIMOX

Proceedings of the International Conference on Ion Implantation Technology

Volumn 1, Issue , 1999, Pages 122-125

  Nakashima, S ^a   Takahashi, M ^a   Nakayama, S ^a   Ohno, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DIFFUSION; MOSFET DEVICES; NITROGEN; OXYGEN; SEMICONDUCTOR DOPING;

SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

ION IMPLANTATION;

EID: 0033312485     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)