Fully depleted UTB and trigate N-channel MOSFETs featuring low-temperature PtSi Schottky-barrier contacts with dopant segregation

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 541-543

  Gudmundsson, Valur ^a   Hellstrom, Per Erik ^a   Luo, Jun ^a   Lu, Jun ^b   Zhang, Shi Li ^a   Östling, Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Dopant segregation (DS); FinFET; Platinum silicide PtSi; Schottky barrier (SB) MOSFET; Trigate

Indexed keywords

DOPANT SEGREGATION (DS); FINFET; PLATINUM SILICIDE PTSI; SCHOTTKY-BARRIER (SB)-MOSFET; TRIGATE;

DIELECTRIC RELAXATION; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; PLATINUM; SILICIDES;

SEGREGATION (METALLOGRAPHY);

EID: 67349263386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2015900     Document Type: Article

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