First-principle calculations on gate/dielectric interfaces: On the origin of work function shifts

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 272-279

  Pourtois, G ^a   Lauwers, A ^a   Kittl, J ^a,b   Pantisano, L ^a   Soree B ^a   Gendt, S De ^a,c   Magnus, W ^a,d   Heyns, M ^a   Maex, K ^a,c  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

DFT; Fermi level pinning; Nickel monosilicide; Work function

Indexed keywords

DIELECTRIC MATERIALS; FERMI LEVEL; INTERFACES (MATERIALS); MICROELECTRONICS; MOSFET DEVICES; NICKEL COMPOUNDS; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS; SURFACE CHEMISTRY;

DFT; FERMI LEVEL PINNING; NICKEL NANOSILICIDE; WORK FUNCTION;

GATES (TRANSISTOR);

EID: 19944383484     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.080     Document Type: Conference Paper

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