Optimization of diffusion, activation and damage annealing in millisecond annealing

16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Volumn , Issue , 2008, Pages 65-87

  Timans, P J ^a   Hu, Y Z ^a   Lee, Y ^a   Gelpey, J ^a   McCoy, S ^a   Lerch, W ^a   Paul, S ^a   Bolze, D ^b   Kheyrandish, H ^c   Reyes, J ^d   Prussin, S ^d  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b IHP   (Germany)

^c CSMA Ltd   (United Kingdom)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ACTIVATION; ION-IMPLANTED DOPANTS; JUNCTION LEAKAGE CURRENTS; MILLISECOND ANNEALING; NONCONTACT MEASUREMENTS; PRE-AMORPHIZED SILICON; SHEET RESISTANCE MEASUREMENTS; ULTRA SHALLOW JUNCTION;

ANODIC OXIDATION; BUDGET CONTROL; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; DAMAGE DETECTION; DIFFUSION; OPTIMIZATION; PROBES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

RAPID THERMAL ANNEALING;

EID: 84876863950     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2008.4690539     Document Type: Conference Paper

References (82)

1. H. Wakabayashi, T. Ezaki, T. Sakamoto, H. Kawaura, N. Ikarashi, N. Ikezawa, M. Narihiro, Y. Ochiai, T. Ikezawa, K. Takeuchi, T. Yamamoto, M. Hane, and T. Mogami, IEEE Trans. Electron Devices 53,(2006) 1961.
2. N. Yasutake, K. Ohuchi, M. Fujiwara, K. Adachi, A. Hokazono, K. Kojima, N. Aoki, H. Suto, T. Watanabe, T. Morooka, H. Mizuno, S. Magoshi, T. Shimizu, S. Mori, H. Oguma, T. Sasaki, M. Ohmura, K. Miyano, H. Yamada, H. Tomita, D. Matsushita, K. Muraoka, S. Inaba, M. Takayanagi, K. Ishimaru and H. Ishiuchi, in 2004 Symposium on VLSI Technology Technical Digest (IEEE, 2004) p. 84.
3. K. Uejima, K. Yako, N. Ikarashi, M. Narihiro, M. Tanaka, T. Nagumo, A. Mineji, S. Shishiguchi and M. Hane, in 2007 International Electron Devices Meeting Technical Digest, (IEEE, 2007) p. 151.
4. Y. Taur, IBM J. Res. Dev. 46(2/3), (2002)213.
5. B. Yu, C. H. J. Warm, E. D. Nowak, K. Noda and C. Hu, IEEE Trans. Electron Devices 44,(1997) 627.
6. H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida, K. Takeuchi, Y. Ochiai, T. Mogami and T. Kunio, IEEE Trans. Electron Devices 49, (2002) 89.
7. A. Erlebach, T. Feudel, A. Schenk and C. Zechner, Mater. Sci. and Eng. B 114-5(2004) 15.
8. P. M. Solomon, D. J. Frank, J. Jopling, C. D'Emic, O. Dokumaci, P. Ronsheim, and W. E. Haensch, 2003 International Electron Devices Meeting Technical Digest, (IEEE, 2003) p. 233.
9. R. Duffy, A. Heringa, J. Loo, E. Augendre, S. Severi and G. Curtatola, ECS Trans. 3(2) (2006) 19.
10. C.-H. Jan, P. Bai, J. Choi, G. Curello, S. Jacobs, J. Jeong, K. Johnson, D. Jones, S. Klopcic, J. Lin, N. Lindert, A. Lio, S. Natarajan, J. Neirynck, P. Packan, J. Park, I. Post, M. Patel, S. Ramey, P. Reese, L. Rockford, A. Roskowski, G. Sacks, B. Turkot, Y. Wang, L. Wei, J. Yip, I. Young, K. Zhang, Y. Zhang, M. Bohr and B. Holt, in 2005 International Electron Devices Meeting Technical Digest, (IEEE, 2005) p. 65.
11. S. E. Thompson, Electrochem. Soc. Proc. PV 2004-01, (2004) 412.
12. S.-D. Kim, C.-M. Park and J. C. S. Woo, IEEE Trans. Electron Devices 49, (2002) 467.
13. B.J. Pawlak, R. Duffy, T. Hoffman, S. Severi, S. B. Felch, P. Eyben, B. Van Daele, W. Vandervorst and R. Lander, ECS Transactions 6(1), (2007) 351.
14. S. Severi, E. Augendre and K. De Meyer, Mater. Res. Soc. Symp. 912, (2006) 77.
15. R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B. J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J. A. Kittl, S. Giangrandi, X. Pages and K. van der Jeugd, J. Vac. Sci. Technol. B 22, (2004) 306.
16. P. Timans, J. Gelpey, S. McCoy, W. Lerch and S. Paul, Mater. Res. Soc. Symp. Proc. 912, (2006) 3.
17. T. Feudel, Mater. Sci. Forum 573-4, (2008) 387.
18. W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Cristiano, F. Severac, M. Gavelle, S. Boninelli, P. Pichler and D. Bolze, Mater. Sci. Eng. B 124-125, (2005) 24.
19. R. A. Camillo-Castillo, M. E. Law, K. S. Jones, L. Radic, R. Lindsay and S. McCoy, Appl. Phys. Lett. 88, (2006) 232104.
20. P. Timans, Y. Z. Hu, J. Gelpey, S. McCoy, W. Lerch, S. Paul, D. Bolze and H. Kheyrandish, Mater. Res. Soc. Symp. Proc. 1070, (2008) 1070-E04-03.
21. A. Satta, R. Lindsay, S. Severi, K. Henson, K. Maex, S. McCoy, J. Gelpey and K. Elliott, Mater. Res. Soc. Symp. Proc. 810, (2004) 15.
22. S. H. Jain, P. B. Griffin, J. D. Plummer, S. McCoy, J. Gelpey, T. Selinger and D. F. Downey, IEEE Trans. Electron. Dev. 52, (2005) 1610.
23. K. Sekar, W. Krulll, T. Horsky, J. Chan, S. McCoy and J. Gelpey, in 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2007, (IEEE, 2007) p. 75.
24. Y. Sasaki, C. G. Jin, H. Tamura, B. Mizuno, R. Higaki, T. Satoh, K. Majima, H. Sauddin, K. Takagi, S. Ohmi, K. Tsutsui and H. Iwai, in 2004 Symposium on VLSI Technology Technical Digest, (IEEE, 2004) p. 180.
25. T. Ito, K. Suguro, M. Tamura, T. Taniguchi, Y. Ushiku, T. Iinuma, T. Itani, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama and T. Kusada, IEEE Trans. Semiconductor Manufacturing 16, (2003) 417.
26. P. J. Timans and N. Acharya, Electrochem. Soc. Proc. PV 2004-01, (2004) 11.
27. P. J. Timans and N. Acharya, Semiconductor Fabtech, 22nd Edition, (2004) 83.
28. K. Suguro, Mater. Sci. Forum 573-574, (2008)319.
29. T. Sanuki, T. Iwamoto, K. Ota, T. Komoda, H. Yamazaki, A. Eiho, K. Miyagi, K. Nakayama, O. Fuji, M. Togo, K. Ohno, H. Yoshimura, K. Yoshida, T. Ito, A. Mineji, K. Yoshino, T. Itani, K. Matsuo, T. Sato, S. Mori, K. Nakazawa, M. Nakazawa, T. Shinyama, K. Suguro, I. Mizushima, S. Iwasa, S. Muramatsu, K. Nagaoka, M. Ikeda, M. Saito, H. Naruse, Y. Enomoto, T. Kitano, M. Iwai, K. Imai, N. Nagashima, T. Kuwata and F. Matsuoka, in 2007 International Electron Devices Meeting Technical Digest, (IEEE, 2007) p. 281.
30. A. Gat and J. F. Gibbons, Appl. Phys. Lett. 32,(1978) 142.
31. S. Talwar, D. Markle and M. Thompson, Solid State Technology 46, (2003) 83
32. S. B. Felch, A. Mayur, V. Parihar, F. Nouril, K. S. Jones, D. E. Zeenberg and B. E. Jones, Mater. Res. Soc. Symp. Proc. 912, (2006) 137.
33. T. Noda, S. Felch, V. Parihar, C. Vrancken, T. Janssens, H. Bender and W. Vandervorst, Mater. Res. Soc. Symp. Proc. 912, (2006) 191.
34. C. Ortolland, T. Noda, T. Chiarella, S. Kubicek, C. Kerner, W. Vandervorst, A. Opdebeeck, C. Vrancken, N. Horiguchi, M. De Potter, M. Aoulaiche, E. Rosseel, S.B. Felch, P. Absil, R. Schreutelkamp, S. Biesemans and T. Hoffmann, in 2008 Symposium on VLSI Technology Technical Digest (IEEE, 2008) p. 186.
35. T. Noda, W. Vandervorst, S. Felch, V. Parihar, C. Vrancken, S. Severi, A. Falepin, T. Janssens, H. Bender, B. Van Daele, P. Eyben, M. Niwa, R. Schreutelkamp, F. Nouri, P. P. Absil, M. Jurczak, K. De Meyer, and S. Biesemans, in 2006 International Electron Devices Meeting Technical Digest, (IEEE, 2006) p. 377.
36. S. Severi, E. Augendre, S. Thirupapuliyur, K. Ahmed, S. Felch, V. Parihar, F. Nouri, T. Hoffman, T. Noda, B. O'Sullivan, J. Ramos, E.San Andres, L. Pantisano, A. De Keersgieter, R. Schreutelkamp, D. Jennings, S. Mahapatra, V.Moroz, K. De Meyer, P. Absil, M. Jurczak and S. Biesemans, in 2006 International Electron Devices Meeting Technical Digest, (IEEE, 2006) p. 859.
37. T. Noda, W. Vandervorst, S. Felch, V. Parihar, A. Cuperus, R. Mcintosh, C. Vrancken, E. Rosseel, H. Bender, B. Van Daele, M. Niwa, H. Umimoto, R. Schreutelkamp, P. P. Absil, M. Jurczak, K. De Meyer, S. Biesemans, and T. Y. Hoffmann, in 2007 International Electron Devices Meeting Technical Digest, (IEEE, 2007) p. 955.
38. S. Severi, E. Augendre, B. Pawlak, P. Eyben, T. Noda, S. Felch, A. Falepin, V. Parihar, R. Schreutelkamp, W. Vandervorst and K. De Meyer, Mater. Res. Soc. Symp. Proc. 912, (2006), 39.
39. T. Yamamoto, T. Kubo, T. Sukegawa, E. Takii, Y. Shimamune, N. Tamura, T. Sakoda, M. Nakamura, H. Ohta, T. Miyashita, H. Kurata, S. Satoh, M. Kase and T. Sugii, in 2007 International Electron Devices Meeting Technical Digest, (IEEE, 2007) p. 143.
40. J. C. Carter, A. G. R. Evans, P. J. Timans and J. M. C. England, J. Vac. Sci. Technol.B9,(1991) 1944.
41. K. Thompson, J. H. Booske, R. L. Ives, J. Lohr, Y. A. Gorelov and K. Kajiwara, Mater. Res. Symp. Proc. 810 (2004) C5.3.1.
42. H.W. Kennel, M.D. Giles, M. Diebel, P.H. Keys, J. Hwang, S. Govindaraju, M. Liu, A. Budrevich, in 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP 2006, (IEEE, 2006) p. 85.
43. V. Moroz and I. Martin-Bragado, Mater. Res. Soc. Symp. Proc. 912, (2006) 179.
44. U. Ehrke, A. Sears, W. Lerch, S. Paul, G. Roters, D. F. Downey and E. A. Arevalo, J. Vac. Sci. Technol. B 22, (2004) 346.
45. M. H. Yang, G. Mount and I. Mowat, J. Vac. Sci. Technol. B 24, (2006) 428.
46. V. N. Faifer, M. I. Current, T. M. H. Wong and V. V. Souchkov, J. Vac. Sci. Technol. B 24, (2006)414.
47. V. N. Faifer, D. K. Schroder, M. I. Current, T. Clarysse, P. J. Timans, T. Zangerle, W. Vandervorst, T. M. H. Wong, A. Moussa, S. McCoy, J. Gelpey, W. Lerch, S. Paul, D. Bolze and J. Halim, J. Vac. Sci. Technol. B 25, (2007)1588.
48. A. Buczkowski, B. Orschel, S. Kim, S. Rouvimov, B. Snegirev, M. Fletcher and F. Kirscht, J. Electrochem. Soc. 150, (2003) G436.
49. A. Buczkowski, ECS Trans. 11(3), (2007) 109.
50. W. L. Smith, A. Rosencwaig and D. L. Willenborg, Appl. Phys. Lett. 47, (1985) 584.
51. M. Hovinen and J. Opsal, J. Vac. Sci. Technol. B 20, (2002) 431.
52. J. Bogdanowicz, F. Dortu, T. Clarysse, W. Vandervorst, D. Shaughnessy, A. Salnik, L. Nicolaides and J. Opsal, j. Vac. Sci. Technol. B 26, (2008) 310.
53. A. Salnick, L. Nicolaides, J. Opsal, A. Jain, D. Rogers and L. Robertson, Rev. Sci. Instrum. 75, (2004)2144.
54. S. Adachi and T. Aoki, J. Appl. Phys. 71,(1992)3313.
55. K. Tsunoda, S. Adachi and M. Takahashi, J. Appl. Phys. 91, (2002) 2936.
56. E. Lioudakis, C. Christofides and A. Othonos, J. Appl. Phys. 99, (2006) 123514.
57. T. C. McGill, S. L. Kurtin and G. A. Shifrin, J. Appl. Phys. 41, (1970) 246.
58. A. Borghesi, A. Piaggi, A. Stella, G. Guizzetti, D. Bisero and G. Queirolo, J. Appl. Phys. 67,(1990) 7045.
59. S.-A. Huang, K.-Y. Lo, L.-H. Hsu and K.-M. Hung, Appl. Phys. Lett. 92, (2008)061901.
60. A. C. deWilton, M. Simard-Normandin and P. T. T. Wong, J. Electrochem. Soc. 133,(1986) 988.
61. A. Othonos, C. Christofides, J. Boussey- Said, M. Bisson, J. Appl. Phys. 75, (1994) 8032.
62. L. O'Reilly, N. S. Bennett, P. J. McNally, B. J. Sealy, N. E. B. Cowern, A. Lankinen and T. O. Tuomi, J Mater Sci: Mater Electron 19 (2008) 305.
63. P. Pichler, Mater. Res. Soc. Symp. Proc. 717, (2002) C3.1.1.
64. S. Banerjee, in Handbook of Semiconductor Manufacturing Technology, edited by R. Doering and Y. Nishi, (CRC Press, Boca Raton, FL, 2008) p. 8-1.
65. R. Duffy, V. Venezia, M. Hopstaken, G. Maas, T. Dao, Y. Tamminga, F. Roozeboom and K. van der Tak, Mater. Res. Soc. Symp. Proc. 912, (2006) 124.
66. C. Bonafos, M. Omri, B. de Mauduit, G. BenAssayag, A. Claverie, D. Alquier, A. Martinez and D. Mathiot, J. Appl. Phys. 82,(1997) 2855.
67. The Stopping and Range of Ions in Matter, http://www.srim.org.
68. A. T. Fiory and K. K. Bourdelle, Appl. Phys. Lett. 74,(1999) 2658.
69. A. Mokhberi, P. B. Griffin, J. D. Plummer, E. Paton, S. McCoy and K. Elliott, IEEE Trans. Electron. Dev. 49, (2002)1183.
70. W. Lerch, B. Bayha, D. F. Downey and E. Arevalo, Electrochem. Soc. Proc. PV 2001-9, (2001)321.
71. A.S.T.M. Designation F723-99, Annual BookofA.S.TM Standards, (2000) 10.05.
72. S. Prussin, AIP Conf. Proc. 931 (2007) 275.
73. S. Prussin, S. Qin, J. Reyes and A. McTeer, in 17th International Conference on Ion Implantation Technology - IIT 2008, in the press.
74. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori and S. Solmi, in Semiconductor Silicon 1977, edited by H. R. Huff and E. Sirtl (Electrochemical Society, Pennington, NJ), p. 638.
75. V. Privitera, E. Schroer, F. Priolo, E. Napolitani and A. Camera, J. Appl. Phys. 88, (2000) 1299.
76. G. Mannino, V. Privitera, S. Solmi and N. E. B. Cowern, Nucl. Instrum. Meth. B 186, (2002) 246.
77. S. M. Sze, Physics of Semiconductor Devices, Second Edition, (Wiley- Interscience, New York, 1981) p. 77.
78. D. F. Edwards, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic Press, San Diego, 1985), p. 547.
79. H. Piller, in Handbook of Optical Constants of Solids, edited by E. D. Palik (Academic Press, San Diego, 1985), p. 571.
80. P. J. Timans, N. Acharya and I. Amarilio, ECS Proceedings PV 2000-9, (2000) 375.
81. S. Prussin, D. I. Margolese and R. N. Tauber, J. Appl. Phys. 57, (1985) 180.
82. L. Romano, private communication.