Analysis of dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Noda, T ^a,b   Vandervorst, W ^b,c   Felch, S ^d   Parihar, V ^d   Vrancken, C ^b   Severi, S ^b,c   Falepin, A ^b   Janssens, T ^b   Bender, H ^b   Van Daele, B ^b   Eyben, P ^b   Niwa, M ^b   Schreutelkamp, R ^d   Nouri, F ^d   Absil, P P ^b   Jurczak, M ^b   De Meyer, K ^b,c   Biesemans, S ^b  

^a PANASONIC CORPORATION   (Japan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; DEFECTS; ELECTRON DEVICES;

CO-IMPLANT; DEFECT EVOLUTION; DOPANT ACTIVATION; DOPANT DIFFUSION; KINETIC MONTE CARLO; NON-MELT LASER ANNEALING; SHALLOW JUNCTION; THERMAL BUDGET;

ANNEALING;

EID: 46049096168     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346789     Document Type: Conference Paper

References (12)

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