Analysis of As, P diffusion and defect evolution during sub-millisecond non-melt laser annealing based on an atomistic kinetic Monte Carlo approach

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 955-958

  Noda, T ^a   Vandervorst, W ^b,c   Felch, S ^d   Parihar, V ^d   Cuperus, A ^d   Mcintosh, R ^d   Vrancken, C ^b   Rosseel, E ^b   Bender, H ^b   Van Daele, B ^b   Niwa, M ^a   Umimoto, H ^a   Schreutelkamp, R ^d   Absil, P P ^b   Jurczak, M ^b   De Meyer, K ^b,c   Biesemans, S ^b   Hoffmann, T Y ^b  

^a PANASONIC CORPORATION   (Japan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES;

CHANNEL REGION; DEFECT EVOLUTION; DOPANT FLUCTUATION; KINETIC MONTE CARLO; N-TYPE DOPANTS; NON-MELT LASER ANNEALING; SHALLOW JUNCTION; VACANCY COMPLEXES;

ANNEALING;

EID: 50249165321     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419111     Document Type: Conference Paper

References (10)

1. S. Severi, et al., "Optimization of Sub-Melt Laser Anneal: Performance and Reliability," in Tech. Dig. IEDM2006, p. 859 (2006).
2. T. Noda, et al., "Analysis of Dopant Diffusion and Defect Evolution during sub-millisecond Non-melt Laser Annealing based on an Atomistic Kinetc Monte Carlo Approach, " in Tech. Dig. IEDM2006, p. 377 (2006).
3. M. Hane, et al., "Simulation of High-temperature Millisecond Annealing based on Atomistic Modeling of Boron Diffusion/Activation in Silicon," in Tech. Dig. IEDM2004 (2004).
4. T. Y. Hoffmann, et al., "Laser Annealed Junctions: Process Integration Sequence Optimization for Advanced CMOS Technologies", IWJT2007, p. 137 (2007).
5. P. Pichler, Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, Wien: Springer-Verlag, (2004).
6. M. Jaraiz, et al., "Atomistic Modeling of Point and Extended Defect in Crystalline Materials", Mat. Res. Soc. Symp. Proc. Vol. 532, 43 (1998).
7. G. Lopez, et al., "Fluorine in Si: Native-defect complexes and the suppression of impurity diffusion", Phys. Rev. B 72, 045219 (2005).
8. T. Noda, et al., "Modeling and Experiments of Boron diffusion during sub-millisecond Non-melt Laser Annealing in Silicon", Mat. Res. Soc. Symp. Proc. Vol. 912, 0912-C05-06 (2006).
9. G. Olson and J. Roth, "Kinetics of solid phase crystallization in amorphous silicon", Mater. Sci. Rep. 3, 1 (1988).
10. T. Noda, et al., "Impact of F co-implant on Boron diffusion during Non-melt laser Annealing", IIT2006, p. 21 (2006).