A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1183-1191

  Mokhberi, Ali ^b   Griffin, Peter B ^b   Plummer, James D ^a,b   Paton, Eric ^c   McCoy, Steve ^d   Elliott, Kiefer ^a,d  

^a IEEE

^b Stanford University   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d Vortek Industries Ltd   (Canada)

Author keywords

Diffusion processes; Doping; Impurities; Semiconductor process modeling

Indexed keywords

ACTIVATION ANALYSIS; ACTIVATION ENERGY; ARSENIC; COMPOSITION EFFECTS; HALL EFFECT; HEAT RESISTANCE; ION IMPLANTATION; PHOSPHORUS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; THERMAL DIFFUSION;

ARC LAMP SYSTEM; ARRHENIUS FITS; DOPANT ACTIVATION; ELECTRICAL ACTIVATION; RAMP RATE; ULTRA LOW ENERGY IMPLANT;

SEMICONDUCTING SILICON;

EID: 0036638773     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013274     Document Type: Article

References (23)

1. International technology roadmap for semiconductors
2. Calculation of the mobility and the hall factor for doped p-type silicon
3. A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon
4. Annealing ultra-low energy boron implants with an arc lamp system
5. The isothermal annealing of boron implanted silicon
6. Electrical activation kinetics for shallow boron implants in silicon
7. Electrical activation of B implanted in silicon at energies below 1 keV
8. Optimized spike anneal temperature-time profiles for advanced s/d extension requirements
9. Fluorine interaction with point defects, boron, and arsenic in ion implanted silicon
10. Self-diffusion in isotopically controlled heterostructures of elemental and compound semiconductors
11. Self-diffusion in silicon: Similarity between the properties of native point defects
12. Trap-limited diffusion and enhanced boron clustering in silicon
13. The fraction of substitutional boron in silicon ion implantation and thermal processing
14. B cluster formation and dissolution in Si: A scenario based on atomistic modeling
15. Role of self- and boron-interstitial clusters in transient enhanced diffusion in silicon
16. +-implanted silicon
17. Ultra low energy arsenic implant limits on sheet resistance and junction depth
18. Annealing of ultra-shallow implanted junctions using arc-lamp technology: Achieving the 90nm node
19. Temperature- and time dependence of boron-enhanced diffusion from evaporated- and ultra-low energy ion-implanted layers
20. High power arc lamp system for high temperature annealing applications
21. Optimizing RTA ramp rate for ultrashallow junctions