Influence of HALO and drain-extension doping gradients on transistor performance

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 15-19

  Erlebach, Axel ^a   Feudel, Thomas ^b   Schenk, Andreas ^c   Zechner, Christoph ^a  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

^b IBM MICROELECTRONICS   (United States)

^c ETH ZURICH   (Switzerland)

Author keywords

Doping; Drain extension; HALO; Saturation current; Threshold voltage roll off; Transistor

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; GRAPH THEORY; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

DRAIN-EXTENSION; HALO; SATURATION CURRENT; THRESHOLD VOLTAGE ROLL-OFF;

TRANSISTORS;

EID: 10644266786     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.022     Document Type: Conference Paper

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