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Volumn 25, Issue 5, 2007, Pages 1588-1592

Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON TUNNELING; LEAKAGE CURRENTS; SHEET RESISTANCE;

EID: 34648821259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2771552     Document Type: Article
Times cited : (13)

References (16)
  • 1
    • 34648832186 scopus 로고    scopus 로고
    • See Table 69 in the Front End Process section of the ITRS05 (www.itrs.net).
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.