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Volumn 25, Issue 5, 2007, Pages 1588-1592
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Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
ELECTRON TUNNELING;
LEAKAGE CURRENTS;
SHEET RESISTANCE;
JUNCTION PHOTOVOLTAGE;
RECOMBINATION CENTERS;
THERMAL BUDGET;
ULTRASHALLOW JUNCTIONS;
SEMICONDUCTOR JUNCTIONS;
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EID: 34648821259
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.2771552 Document Type: Article |
Times cited : (13)
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References (16)
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