Influence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 5, 2007, Pages 1588-1592

  Faifer, V N ^a   Schroder, D K ^b   Current, M I ^a   Clarysse, T ^c   Timans, P J ^d   Zangerle, T ^c,e   Vandervorst, W ^c,f   Wong, T M H ^a   Moussa, A ^c   McCoy, S ^d   Gelpey, J ^d   Lerch, W ^g   Paul, S ^g   Bolze, D ^d   Halim, J ^a  

^a Frontier Semiconductor   (United States)

^b AZ 85281

^c IMEC   (Belgium)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

^e UNIVERSITY OF LIÈGE   (Belgium)

^f UNIVERSITY OF LEUVEN   (Belgium)

^g Frontier Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON TUNNELING; LEAKAGE CURRENTS; SHEET RESISTANCE;

JUNCTION PHOTOVOLTAGE; RECOMBINATION CENTERS; THERMAL BUDGET; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 34648821259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2771552     Document Type: Article

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