Device characteristics of ultra-shallow junctions formed by fRTP annealing

Materials Research Society Symposium - Proceedings

Volumn 810, Issue , 2004, Pages 15-20

  Satta, A ^a   Lindsay, R ^a   Severi, S ^a   Henson, K ^a   Maex, K ^a   McCoy, S ^b   Gelpey, J ^b   Elliott, K ^b  

^a IMEC   (Belgium)

^b Vortek Industries Ltd   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CMOS INTEGRATED CIRCUITS; DIFFUSION; ELECTROMAGNETIC WAVES; LEAKAGE CURRENTS; PARAMETER ESTIMATION; RAPID THERMAL ANNEALING; THERMAL EFFECTS;

LASER THERMAL PROCESSING (LTP); OPTICAL RADIATION; SPIKE-ANNEALED JUNCTIONS; THERMAL PROCESSING;

SEMICONDUCTOR JUNCTIONS;

EID: 5544290525     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-810-c1.3     Document Type: Conference Paper

References (4)

1. J. C. Gelpey, K. Elliott, D. Camm, S. McCoy, J. Ross, D. F. Downey, E. A. Arevalo, Spring 2002 ECS; Symposium Q1, Philadelphia, March 2002, in press.
2. th International Conference on Advanced Thermal Processing of Semiconductors-RTP 2002, in press.
3. R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross, S. McCoy, J. Gelpey, K. Elliott, X. Pages, A. Satta, A. Lauwers, P. Stolk, and K. Maex, MRS spring 2003 Proceedings.
4. K. S. Jones, H. Banisukas, J. Glassberg, E. Andideh, C. Jasper, A. Hoover, A. Agarwal, M. Rendon, Appl. Phys. Lett. 75, 3659 (1999).