Tunnel Current Measurements on P/N Junction Diodes and Implications for Future Device Design

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 233-236

  Solomon, Paul M ^a   Frank, David J ^a   Jopling, Jason ^c   D'Emic, Chris ^a   Dokumaci, O ^b   Ronsheim, P ^b   Haensch, W E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Microelectronics Division   (United States)

^c DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND CURVATURE; TUNNELING CURRENTS;

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; ELECTRON TUNNELING; ENERGY GAP; LEAKAGE CURRENTS; PHONONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TRANSISTORS; ULTRATHIN FILMS;

SEMICONDUCTOR DIODES;

EID: 0842288272     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. G.G. Shahidi, IBM J. Res. Develop., 46, 121 (2002).
3. D.J. Frank, 2001 IEDM Digest of Technical Papers, p.643.
4. Data to be published separately by the present authors.
5. L.V. Keldysh, Soviet Phys.-JETP, 6, 763 (1958) and 7, 665 (1958).
6. L.V. Keldysh, Soviet Phys.-JETP, 6, 763 (1958) and 7, 665 (1958).
7. G.A.M. Hurkx, D.B.M Klaasen, and M.P.G. Knuvers, IEEE Trans. Electron Dev., ED-30, 1527 (1983)
8. ITRS Roadmap, 2002 update, www.sematech.org