Enhanced activation of standard and cocktail spike annealed junctions with additional sub-melt laser anneal

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 39-44

  Severi, Simone ^a,b   Augendre, Emmanuel ^a   Pawlak, Bartek ^c   Eyben, Pierre ^a   Noda, Taiji ^d   Felch, Susan ^e   Falepin, Annelies ^a   Parihar, Vijay ^e   Schreutelkamp, Robert ^e   Vandervorst, Wilfried ^a   De Meyer, Kristin ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d PANASONIC CORPORATION   (Japan)

^e APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ION IMPLANTATION; LASER APPLICATIONS; TRANSISTORS;

LASER ANNEALING; NMOS TRANSISTORS; PMOS TRANSISTORS;

SEMICONDUCTOR JUNCTIONS;

EID: 33751022326     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c01-07     Document Type: Conference Paper

References (9)

1. R. Lindsay et al., IJWT 2004
2. S. Severi et al., IEDM 2004
3. A. Shima et al., IEEE Trans. Elect. Dev. 2005
4. S. H. Jain et al., IEEE Trans. Elect. Dev. 2005
5. B. J. Pawlak et al., submitted to Appl. Phys. Lett.
6. B. J. Pawlak et al., submitted to Appl. Phys. Lett.
7. A. kottantharayil et al., VLSI 2004
8. Y. F. Chong et al., IEEE Trans. Elect. Dev. 2004
9. B. J. Pawlak et al., submitted to MRS 2006