Modeling and experiments of boron diffusion during sub-millisecond non-melt laser annealing in silicon

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 191-196

  Noda, Taiji ^a,b   Felch, Susan ^c   Parihar, Vijay ^c   Vrancken, Christa ^b   Janssens, Tom ^b   Bender, Hugo ^b   Vandervorst, Wilfried ^b  

^a PANASONIC CORPORATION   (Japan)

^b IMEC   (Belgium)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

BORON DIFFUSION; DOPANT ACTIVATION; END-OF-RANGE DEFECTS; LASER ANNEALING;

SEMICONDUCTING SILICON;

EID: 33751033425     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c05-06     Document Type: Conference Paper

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