Photoluminescence-based metrology for Si and SiGe materials

ECS Transactions

Volumn 11, Issue 3, 2007, Pages 109-122

  Buczkowski, Andrzej ^a  

^a NANOMETRICS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; GROWTH KINETICS; LITHIUM COMPOUNDS; PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON;

ACTIVATION EFFECT; EXTENDED DEFECT; IMPLANTATION CONDITIONS; IMPLANTATION DOSE; ION IMPLANTED; PROCESS VARIATION; TOOL SIGNATURES; ULTRA SHALLOW JUNCTION;

SI-GE ALLOYS;

EID: 45249099755     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2778654     Document Type: Conference Paper

References (8)

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