High-performance 45nm node CMOS transistors featuring flash lamp annealing (FLA)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 281-284

  Sanuki, T ^a   Iwamoto, T ^b   Ota, K ^c   Komoda, T ^a   Yamazaki, H ^c   Eiho, A ^a   Miyagi, K ^a   Nakayama, K ^a   Fuji, O ^a   Togo, M ^b   Ohno, K ^c   Yoshimura, H ^a   Yoshida, K ^a   Ito, T ^a   Mineji, A ^b   Yoshino, K ^a   Itani, T ^a   Matsuo, K ^a   Sato, T ^a   Mori, S ^a   Nakazawa, K ^c   Nakazawa, M ^c   Shinyama, T ^c   Suguro, K ^a   Mizushima, I ^a   Iwasa, S ^a   Muramatsu, S ^b   Nagaoka, K ^c   Ikeda, M ^b   Saito, M ^c   Naruse, H ^a   Enomoto, Y ^c   Kitano, T ^b   Iwai, M ^a   Imai, K ^b   Nagashima, N ^c   Kuwata, T ^b   Matsuoka, F ^a   more..

^a TOSHIBA CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NANOTECHNOLOGY; OPTICAL DESIGN; PLASMAS; TRANSISTORS;

45NM NODE; CMOS TRANSISTORS; DRIVE CURRENTS; EPITAXIALLY GROWN; FLASH-LAMP-ANNEALING; PATTERN DENSITY DEPENDENCE; PERFORMANCE GAINS; S/D EXTENSION; TRANSIENT-ENHANCED DIFFUSION;

ANNEALING;

EID: 50249164857     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418923     Document Type: Conference Paper

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