Implants of ClusterBoron® and ClusterCarbon™ materials for USJ applications - A study with various anneal techniques

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 75-80

  Sekar, Karuppanan ^a   Krull, Wade ^a   Horsky, Tom ^a   Chan, Jason ^b   McCoy, Steve ^b   Gelpey, Jeff ^b  

^a Ceradyne Inc   (United States)

^b Mattson Technology Canada   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; BORON COMPOUNDS; CRYSTALS; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE APPLICATIONS; INTERNET PROTOCOLS; ION BEAMS; NANOTECHNOLOGY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS;

32 NM TECHNOLOGIES; 32NM NODES; 45NM NODES; BORON ACTIVATIONS; EFFECT OF CO; END OF RANGES; FLASH ANNEAL; HIGH TEMPERATURES; JUNCTION DEPTHS; SHALLOW JUNCTIONS; SOLID PHASE EPITAXIAL REGROWTHS; SPIKE ANNEAL; TEM IMAGES;

RAPID THERMAL ANNEALING;

EID: 47949130960     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383822     Document Type: Conference Paper

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