Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 414-420

  Faifer, V N ^a   Current, M I ^a   Wong, T M H ^a   Souchkov, V V ^a  

^a Frontier Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROCESS CONTROL PARAMETERS; SHEET RESISTANCE; ULTRA-SHALLOW JUNCTIONS (USJ);

DOPING (ADDITIVES); ELECTRIC RESISTANCE; LEAKAGE CURRENTS; PROCESS CONTROL;

SEMICONDUCTOR JUNCTIONS;

EID: 31544472372     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2137334     Document Type: Article

References (15)

1. D. K. Schroder, IEEE Trans. Electron Devices 44, 160 (1997).
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
3. R. S. Nakhamson, Solid-State Electron. 18, 617 (1975).
4. J. E. Park, D. K. Schroder, S. E. Tan, B. D. Choi, M. Fletcher, A. Buczowski, and F. Kirsht, J. Electrochem. Soc. 148, G411 (2001).
5. V. Faifer, V. Dyukov, A. Pradivtsev, and D. Skurida, Proc. 24th European Solid State Device Research Conf. (ESSDERC'94), IOP., pp. 601-604 (1994).
6. M. I. Current, V. N. Faifer, and W. Walecki, Proc. 5th Inter. Conf. on Microelectronics and Interfaces., pp. 7-9 (2004).
7. V. N. Faifer, M. I. Current, W. Walecki, V. Souchkov, G. Mikhaylov, P. Van, T. Wong, T. Nguyen, J. Lu, S. H. Lau, and A. Koo, MRS Proc. 810, C11.9 (2004).
8. V. N. Faifer, M. I. Current, V. Souchkov, and V. Komin, Proc. 6th Inter. Conf. on Microelectronics and Interfaces., pp. 161-163 (2005).
9. T. Clarysse, F. Dortu, D. Vanhaeren, I. Hoflijk, L. Geenen, T. Janssens, R. Loo, W. Vandervorst, B. J. Pawlak, V. Ouzeaud, C. Defranoux, M. I. Current, and V. N. Faifer, Mater. Sci. Eng., B 114-115, 166 (2004).
10. V. N. Faifer, M. I. Current, T. M. H. Wong, T. Nguyen, and P. Van, toappear in Proc. of 15th Inter. Conf. on Ion Implantation Technology-2004 (IIT04) (Elsevier, New York, 2005).
11. T. Claryesse, D. Vanhaeren, and W. Vandervorst, J. Vac. Sci. Technol. B 20, 459 (2002).
12. H. Graoui, A. Al-Bayati, M. Duane, and R. Tichy, Proc. 14th Inter. Conf. on Ion Implantation Technology (IIT02), IEEE 02EX505., pp. 189-192 (2003).
13. P. M. Solomon, D. J. Frank, J. Jopling, C. D'Emic, O. Dokumaci, P. Ronsheim, and W. E. Haensch, IEDM-03. (2003).
14. R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B. J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J. A. Kittl, S. Giangrandi, X. Pages, and K. van der Jeugd, J. Vac. Sci. Technol. B 22, 306 (2004).
15. Alvin H. Tong and Andrew Dupnock, J. Electrochem. Soc. 118, 390 (1971).