Raman scattering studies of ultrashallow Sb implants in strained Si

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 4, 2008, Pages 305-309

  O'Reilly, L ^a   Bennett, N S ^b   McNally, P J ^a   Sealy, B J ^b   Cowern, N E B ^b   Lankinen, A ^c   Tuomi, T O ^c  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; ELECTRICAL ACTIVATION; PHONON COHERENCE;

CARRIER CONCENTRATION; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SHEET RESISTANCE; TENSILE STRESS; ULTRAVIOLET RADIATION;

ANTIMONY;

EID: 39149113505     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9339-9     Document Type: Article

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