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Volumn 20, Issue 1, 2002, Pages 431-435
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Nondestructive analysis of ultrashallow junction implant damage by combined technology of thermal wave and spectroscopic methods
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
BORON;
CRYSTAL DEFECTS;
ELLIPSOMETRY;
ION IMPLANTATION;
NONDESTRUCTIVE EXAMINATION;
OPTICAL DEVICES;
PUMPING (LASER);
REFLECTOMETERS;
SILICON WAFERS;
SPECTROSCOPIC ANALYSIS;
THERMAL EFFECTS;
BEAM PROFILE ELLIPSOMETRY (BPE);
THERMAL WAVE;
ULTRASHALLOW JUNCTIONS;
SEMICONDUCTOR JUNCTIONS;
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EID: 0036124842
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1446453 Document Type: Conference Paper |
Times cited : (2)
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References (12)
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