Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing

Applied Physics Letters

Volumn 88, Issue 23, 2006, Pages

  Camillo Castillo, R A ^a   Law, Mark E ^a   Jones, Kevin S ^a   Radic, Ljubo ^a   Lindsay, R ^b   McCoy, S ^c  

^a University of Florida   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Mattson Technology   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITIES; FLASH ANNEAL; IMPLANT;

ACTIVATION ENERGY; CRYSTAL DEFECTS; DISSOLUTION; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

RAPID THERMAL ANNEALING;

EID: 33745019806     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201043     Document Type: Article

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