Efficacy of damage annealing in advanced ultra-shallow junction processing

Materials Research Society Symposium Proceedings

Volumn 1070, Issue , 2008, Pages 155-162

  Timans, Paul ^a   Hu, Yao Zhi ^a   Gelpey, Jeff ^b   McCoy, Steve ^b   Lerch, Wilfried ^a   Paul, Silke ^a   Bolze, Detlef ^c   Kheyrandish, Hamid ^d  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b Mattson Technology Canada Inc   (Canada)

^c IHP   (Germany)

^d CSMA Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; DIFFUSION; HEAVY IONS; RAPID THERMAL ANNEALING; SILICON WAFERS;

ANNEALING EXPERIMENTS; CRYSTALLINE SILICONS; FLASH-ASSISTED RTP; JUNCTION LEAKAGE CURRENTS; MILLISECOND ANNEALING; PRE-AMORPHIZATION IMPLANT; SOLID PHASE EPITAXY; ULTRA SHALLOW JUNCTION;

DAMAGE DETECTION;

EID: 62949174279     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e04-03     Document Type: Conference Paper

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