Physical modeling of defects, dopant activation and diffusion in aggressively scaled bulk and SOI devices: Atomistic and continuum approaches

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 179-190

  Moroz, Victor ^a   Martin Bragado, Ignacio ^a  

^a SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DEFECTS; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; PHOTORESISTS; THRESHOLD VOLTAGE;

ATOMISTIC MODELING; CONTINUUM MODELING; DOPANT DIFFUSION; PHOTORESIST MASKS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33751059309     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c05-05     Document Type: Conference Paper

References (5)

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3. V. Moroz, M. Foad, H. Graoui, F. Nouri, D. Pramanik, and S. Felch, "Ultra-shallow junctions for the 65nm node based on defect and stress engineering," MRS Proceedings, 2005.
4. J. M. Poate, D. J. Eaglesham, G. H. Gilmer, H.-J. Gossmann, M. Jaraiz, C. S. Rafferty, P. A. Stolk, "Ion implantation and transient enhanced diffusion," EDM Tech. Dig., pp. 77 -80, 1995.
5. Sentaurus Process kMC User's Guide, Synopsys, 2006.