Ultra-rapid thermal process for ULSIs

Materials Science Forum

Volumn 573-574, Issue , 2008, Pages 319-324

  Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Activation; Annealing; Defect annihilation; Defects; Diffusion; Flash lamp annealing; Impurity atoms; MOSFETs; Rapid thermal annealin; Thermal budget; Ultra shallow junction

Indexed keywords

ANNEALING; BUDGET CONTROL; CHEMICAL ACTIVATION; DEFECTS; DIFFUSION; MOSFET DEVICES; RAPID THERMAL PROCESSING; SEMICONDUCTOR JUNCTIONS; ULSI CIRCUITS;

DEFECT ANNIHILATION; FLASH LAMP ANNEALING; IMPURITY ATOMS; MOSFETS; RAPID THERMAL ANNEALIN; THERMAL BUDGET; ULTRA SHALLOW JUNCTION;

RAPID THERMAL ANNEALING;

EID: 45749114156     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.573-574.319     Document Type: Article

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