Low resistance, low-leakage ultrashallow p+-junction formation using millisecond flash anneals

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1610-1615

  Jain, Sameer H ^a   Griffin, Peter B ^a   Plummer, James D ^a   McCoy, Steve ^b   Gelpey, Jeff ^b   Selinger, Tara ^b   Downey, Dan F ^c  

^a Stanford University   (United States)

^b Mattson Technology Canada   (Canada)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

Activation; Boron; End of range (EOR) damage; Leakage current; Solid phase epitaxy (SPE)

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL ACTIVATION; CRYSTALLINE MATERIALS; DIFFUSION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; LEAKAGE CURRENTS; MOSFET DEVICES; SEMICONDUCTING BORON;

END-OF-RANGE (EOR) DAMAGE; SOLID PHASE EPITAXY;

SEMICONDUCTOR JUNCTIONS;

EID: 23944453211     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850621     Document Type: Article

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