Photoluminescence intensity analysis in application to contactless characterization of silicon wafers

Journal of the Electrochemical Society

Volumn 150, Issue 8, 2003, Pages

  Buczkowski, A ^a   Orschel, B ^a   Kim, S ^a   Rouvimov, S ^a   Snegirev, B ^a   Fletcher, M ^a   Kirscht, F ^a  

^a SUMCO USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON ENERGY LEVELS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS;

CONTACTLESS CHARACTERIZATION; DOPING STRIATION; PHOTOLUMINESCENCE INTENSITY; SURFACE RECOMBINATION;

SILICON WAFERS;

EID: 0041699914     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1585056     Document Type: Article

References (13)

1. D. Schroder, Semiconductor Material And Device Characterization, John Wiley & Sons, New York (1990).
2. S. Ibuka, M. Tajima, H. Takeno, M. Warashina, T. Abe, and K. Nagasaka, Jpn. J. Appl. Phys., Part 2, 36, L494 (1997).
3. K. H. Cho, J. Y. Lee, E. K. Suh, and K. W. Kim, Jpn. J. Appl. Phys., Part 1, 36, 1 (1997).
4. S. Ibuka and M. Tajima, Jpn. J. Appl. Phys., Part 2, 39, L1124 (2000).
5. V. Y. Timoshenko, J. Rappich, and T. Dittrich, Jpn. J. Appl. Phys., Part 2, 36, L58 (1997).
6. M. Warashina and M. Tajima, Jpn. J. Appl. Phys., Part 1, 35, 120 (1996).
7. SIPHER, Model b2/03-98 Bio-Rad Semiconductor Systems Division (now Accent Optical Technologies) (1998).
8. F. Kirscht, B. Orschel, S. Kim, S. Rouvimov, B. Snegirev, M. Fletcher, M. Shabani, and A. Buczkowski, in Defect and Impurity Engineered Semiconductors and Devices III, S. Ashok, J. Chevallier, N. M. Johnsonn, B. L. Sopori, H. Okushi, Editors, vol. 719, Materials Research Society, Pittsburgh, PA (2002).
9. S. Westrate and V. Higgs, Solid State Technol., 45, 57 (2002).
10. J. Blakemore, Semiconductor Statistics, Dover Publications, New York (1987).
11. Numerical Data and Functional Relationships in Science and Technology, Vol. 17, Semiconductors, subvolume a, O. Madelung, Editor, Springer-Verlag, Berlin (1982).
12. Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon, Annual Book of ASTM Standards, 10.05, p. 275 (2000).
13. H. K. Jung, K. Taniguchi, and C. Hamaguchi, Jpn. J. Appl. Phys., Part 1, 34, 3054 (1995).