B2H6 plasma doping with "in-situ He pre -amorphization"

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 180-181

  Sasaki, Y ^a   Jin, C G ^a   Tamura, H ^a   Mizuno, B ^a   Higaki, R ^b   Satoh, T ^b   Majima, K ^b   Sauddin, H ^b   Takagi, K ^b   Ohmi, S ^b   Tsutsui, K ^b   Iwai, H ^b  

^a Ultimate Junction Technologies Inc ^*  (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; FLASH LAMP ANNEALING (FLA); LASER ANNEALING; PLASMA DOPING; SHEET RESISTANCE;

ABSORPTION; ANNEALING; CONCENTRATION (PROCESS); DIFFUSION; ELLIPSOMETRY; IRRADIATION; LIGHT ABSORPTION; OPTIMIZATION; PARAMETER ESTIMATION; PLASMA DENSITY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; WAVE PLASMA INTERACTIONS;

AMORPHIZATION;

EID: 4544236746     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. A. Hori and B. Mizuno, Tech. Dig. of IEDM, p.641, 1999.
2. S. P. McCoy, et al. Ultra Shallow Junction 2003, p. 104, 2003.
3. K. Yamazaki, et al. AM-LCD, p. 149, 2002.
4. T. Ito, et al., Symp. on VLSI Tech. p53-54, 2003.
5. T. Yamamoto, et al., Symp. on VLSI Tech. p53-54, 2002.
6. A. Shima, et al. Tech. Dig. of IEDM, p.493,2003.
7. B. J. Pawlak, et al., HT 2002, p. 21-24.
8. S. B. Felch, et al., IIT 2000, p. 167.