Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 346-349

  Ehrke, U ^a   Sears, A ^a   Lerch, W ^b   Paul, S ^b   Roters, G ^b   Downey, D F ^c   Arevalo, E A ^c  

^a Thermo Fisher Scientific   (United States)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; DATA REDUCTION; ERROR ANALYSIS; INTERFEROMETRY; LEAST SQUARES APPROXIMATIONS; NANOTECHNOLOGY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ACTIVATED DOSE; NANOMETER TECHNOLOGY;

ION IMPLANTATION;

EID: 1642315918     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1633284     Document Type: Conference Paper

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