Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Hu, Cheng Yu ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROJUNCTION; BIAS STRESS; DIRECT CHANNEL; DRAIN ACCESS; DUAL-GATE STRUCTURE; GAN BUFFER LAYERS; GATE EDGE; INJECTED ELECTRONS; MONOCHROMATIC IRRADIATION; NON-LOCALIZED; SURFACE LEAKAGE CURRENTS; TRAP DENSITY; TRAP LEVELS; TRAPPING EFFECTS;

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; HOT ELECTRONS; IMPACT IONIZATION; PASSIVATION;

GALLIUM NITRIDE;

EID: 84860517161     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704393     Document Type: Article

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