Surface charging and current collapse in an AlGaNGaN heterostructure field effect transistor

Applied Physics Letters

Volumn 86, Issue 8, 2005, Pages 1-3

  Sabuktagin, S ^a   Dogan S ^a,b   Baski, A A ^a   Morko H ^a  

^a Virginia Commonwealth University   (United States)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; KELVIN PROBE MICROSCOPY; SURFACE CHARGING; SURFACE POTENTIAL;

ALUMINUM COMPOUNDS; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRON TUNNELING; EVAPORATION; FIELD EFFECT TRANSISTORS; GAIN CONTROL; GALLIUM NITRIDE; METALLIZING; ORGANOMETALLICS; RELAXATION PROCESSES; SURFACE TREATMENT; VAPOR PHASE EPITAXY;

HETEROJUNCTIONS;

EID: 17044386222     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1867553     Document Type: Article

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