Impact of gate and passivation structures on current collapse of AlGaN/GaN high-electron-mobility transistors under off-state-bias stress

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 1, 2011, Pages

  Tajima, Masafumi ^a   Hashizume, Tamotsu ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT COLLAPSE; DEVICE STRUCTURES; DRAIN ELECTRODES; DRAIN SATURATION CURRENT; DUAL-GATE STRUCTURE; ELECTRIC FIELD STRENGTH; ELECTRON CHARGING; GATE EDGE; GATE STRESS; GATE-BIAS STRESS; GATE-LEAKAGE CURRENT; METAL OXIDE SEMICONDUCTOR; OFF-STATE STRESS; ON CURRENTS; ON-RESISTANCE; PASSIVATION STRUCTURE; SCHOTTKY-GATE; SURFACE PASSIVATION; SURFACE STATE DENSITY; VIRTUAL GATE;

DRAIN CURRENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOS DEVICES; PASSIVATION; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959470479     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.061001     Document Type: Article

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