Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

Electronics Letters

Volumn 37, Issue 10, 2001, Pages 661-662

  Klein, P B ^a   Binari, S C ^a   Ikossi Anastasiou, K ^a   Wickenden, A E ^a   Koleske, D D ^a   Henry, R L ^a   Katzer, D S ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; HOLE TRAPS; MESFET DEVICES; PHOTOIONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

ALUMINUM GALLIUM NITRIDE TRANSISTORS; CURRENT COLLAPSE; GALLIUM NITRIDE BUFFER LAYER; GALLIUM NITRIDE TRANSISTORS; HIGH RESISTIVITY BUFFER LAYER; PHOTOIONIZATION SPECTROSCOPY;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035837188     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010434     Document Type: Article

References (5)

1. Fabrication and characterization of GaN FETs
2. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
3. Observation of deep traps responsible for current collapse in GaN metal semiconductor field effect transistors
4. Photoionization spectroscopy of traps in GaN metal semiconductor field effect transistors
5. Wave functions and optical cross sections associated with deep centers in semiconductors